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2SC3648 датащи(PDF) 2 Page - ON Semiconductor |
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2SC3648 датащи(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() 2SA1418 / 2SC3648 No.1788-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 500 mW When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)120V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA DC Current Gain hFE1VCE=(--)5V, IC=(--)100mA 100* 400* hFE2VCE=(--)5V, IC=(--)10mA 90 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 120 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (11)8 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)250mA, IB=(--)25mA (--0.2)0.12 (--0.5)0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)250mA, IB=(--)25mA (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)160 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-ON Time ton See specified Test Circuit. (60)50 ns Storage Time tstg (900)1000 ns Fall Time tf (60)60 ns * : The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA1418S-TD-E PCP 1,000pcs./reel Pb Free 2SC3648S-TD-E PCP 1,000pcs./reel 2SC3648T-TD-E PCP 1,000pcs./reel INPUT 100V 50Ω 100μF 470μF --5V IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% 333Ω RB IB1 IB2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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