2N7002PS

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Product data sheet

Rev. 1 — 1 July 2010

2 of 16

NXP Semiconductors

2N7002PS

60 V, 320 mA N-channel Trench MOSFET

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 2.

Pinning

Pin

Symbol

Description

Simplified outline

Graphic symbol

1S1

source1

2

G1

gate1

3D2

drain2

4S2

source2

5

G2

gate2

6D1

drain1

13

2

4

5

6

msd901

Table 3.

Ordering information

Type number

Package

Name

Description

Version

2N7002PS

SC-88

plastic surface-mounted package; 6 leads

SOT363

Table 4.

Marking codes

Type number

Marking code[1]

2N7002PS

M8*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

drain-source voltage

60

V

gate-source voltage

±20

V

drain current

[1]

320

mA

240

mA

peak drain current

-1.2

A