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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5338 датащи(PDF) 2 Page - NEC |
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2SC5338 датащи(HTML) 2 Page - NEC |
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2 / 10 page  2 2SC5338 ELECTRICAL CHARACTERISTICS (TA = 25 ° °°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cutoff Current ICBO VCB = 20 V, IE = 0 1.5 µA Emitter Cutoff Current IEBO VEB = 2 V, IC = 0 1.5 µA DC Current Gain hFE VCE = 5 V, IC = 50 mA Note2 50 250 Gain Bandwidth Product fT VCE = 5 V, IC = 50 mA 6.0 GHz Feed-back Capacitance Cre VCB = 5 V, IE = 0, f = 1 MHz Note3 1.0 2.0 pF Insertion Power Gain |S21e| 2 VCE = 5 V, IC = 50 mA, f = 1 GHz 8.5 10 dB Nose Figure NF VCE = 5 V, IC = 50 mA, f = 1 GHz 3.5 dB IM2 VCE = 5 V − 55 dB VCE = 10 V − 63 IM3 VCE = 5 V − 76 dB VCE = 10 V − 83 Notes 2. Pulse measurement: PW ≤ 350 µS, Duty Cycle ≤ 2 % 3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Rank SH SF SE Marking SH SF SE hFE 50 to 100 80 to 160 125 to 250 3rd Order Intermoduration Distortion 2nd Order Intermoduration Distortion IC = 50 mA Vin = 105 dB µV/75 Ω f = 190 MHz − 90 MHz IC = 50 mA Vin = 105 dB µV/75 Ω f = 2 × 190 MHz − 200 MHz |
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