PRELIMINARY DATA SHEET

1996

©

Document No. P10938EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

Silicon Transistor

2SC5336

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

FEATURES

PACKAGE DIMENSIONS

•

High gain

(in millimeters)

•

New power mini-mold package version of a 4-pin type

gain-improved on the 2SC3357

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

Note1

1.2

W

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

1.0

µA

Emitter Cutoff Current

1.0

µA

DC Current Gain

Note2

50

120

250

Gain Bandwidth Product

6.5

GHz

Feed-back Capacitance

Note3

0.5

0.8

pF

Insertion Power Gain

2

12.0

dB

Noise Figure

NF

1.1

dB

Noise Figure

NF

1.8

3.0

dB

Notes 2. Pulse measurement : PW

≤ 350

µS, Duty Cycle ≤ 2 %

3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

Rank

RH

RF

RE

Marking

RH

RF

RE

50 to 100

80 to 160

125 to

250

4.5±0.1

1.6±0.2

1.5±0.1

0.42

±0.06

0.46

±0.06

3.0

1.5

0.42

±0.06

C

EB

E

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

0.25±0.02

Note 1. 0.7 mm