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GP400DDM12 датащи(PDF) 4 Page - Dynex Semiconductor

номер детали GP400DDM12
подробное описание детали  Dual Switch IGBT Module Advance Information
PDF  9 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP400DDM12 датащи(HTML) 4 Page - Dynex Semiconductor

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GP400DDM12
49
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
-
-
-
-
-
-
-
Typ.
800
110
65
700
170
45
30
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 400A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 400A, VR = 50% VCES,
dI
F/dt = 2000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
-
-
-
-
-
-
-
Typ.
1000
150
80
800
300
75
65
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 400A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 400A, VR = 50% VCES,
dI
F/dt = 2000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr



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