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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GP1600FSM18 датащи(PDF) 5 Page - Dynex Semiconductor |
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GP1600FSM18 датащи(HTML) 5 Page - Dynex Semiconductor |
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5 / 9 page  GP1600FSM18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance 0 400 800 1200 2400 2800 3200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12V Common emitter Tcase = 25˚C 2000 1600 Vge = 10V 0 400 800 1200 2400 2800 3200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12V Common emitter Tcase = 125˚C 2000 1600 Vge = 10V 01600 200 400 Collector current, IC - (A) 0 100 700 Tcase = 125˚C VGE = ±15V VCE = 900V Rg = 2.2Ω EOFF EON EREC 200 300 400 500 600 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1800 1600 1400 01 2 3 4 5 6 7 8 9 10 EON EOFF EREC Tcase = 125˚C VGE = ±15V VCE = 900V IT = 1600A |
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