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GP1200FSM18 датащи(PDF) 5 Page - Dynex Semiconductor |
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GP1200FSM18 датащи(HTML) 5 Page - Dynex Semiconductor |
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5 / 9 page ![]() GP1200FSM18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typicalswitching energy vs gate resistance 0 200 400 600 1200 1400 2400 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12V Common emitter Tcase = 25˚C 1000 800 2000 2200 1800 1600 Vge = 10V 0 200 400 600 1200 1400 1600 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12V Common emitter Tcase = 125˚C 1000 2000 2200 2400 1800 800 Vge = 10V 0800 200 400 Collector current, IC - (A) 0 0.5 0.6 0.7 0.8 0.9 1.0 Tcase = 125˚C VGE = 15V VCE = 900V RG = 2.2Ω L = 50nH 0.2 0.1 0.3 0.4 600 1200 1000 EREC EON EOFF 04 12 Gate resistance, RG - (Ohms) 0 1.50 1.75 2.00 Tcase = 125˚C VGE = 15V VCE = 900V IC = 1200A L = 50nH 0.50 0.25 0.75 1.25 1.00 38 56 7 10 9 EREC EOFF EON |
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