2SC5194 datasheet(1/10 Pages) NEC

номер детали	2SC5194

подробное описание детали	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

PDF	10 Pages

Scroll/Zoom	100%

производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

Logo

1 / 10 page

©

1994

DATA SHEET

SILICON TRANSISTOR

FEATURES

PACKAGE DRAWINGS

•

Low Voltage Operation, Low Phase Distortion

(Unit: mm)

•

Low Noise

NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

•

Large Absolute Maximum Collector Current

IC = 100 mA

•

4-Pin Compact Mini Mold Package

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

2SC5194-T1

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face to perforation

side of the tape.

2SC5194-T2

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 1 (Collector), Pin 2 (Emitter) face to

perforation side of the tape.

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

100

mA

Total Power Dissipation

PT

150

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

2SC5194

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

2.1±0.2

1.25±0.1

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Document No. P10397EJ2V0DS00 (2nd edition)

(Previous No. TD-2487)

Date Published August 1995 P

Printed in Japan

Аналогичный номер детали - 2SC5194

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SC5194	221Kb / 12P	SILICON TRANSISTOR 1994
	2SC5194-T1	221Kb / 12P	SILICON TRANSISTOR 1994
	2SC5194-T2	221Kb / 12P	SILICON TRANSISTOR 1994

More results

Аналогичное описание - 2SC5194

производитель	номер детали	датащи	подробное описание детали
NEC	2SC2148	52Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC3356	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
	2SC3582	99Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4536	60Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC5195	63Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC3583	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4094	323Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4095	329Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Leshan Radio Company	L2SC3357	309Kb / 2P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC2148	180Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR August 1996

More results

2SC5194 датащи(PDF) 1 Page - NEC

2SC5194 датащи(HTML) 1 Page - NEC

Аналогичный номер детали - 2SC5194

Аналогичное описание - 2SC5194

Html Pages

1 2 3 4 5 6 7 8 9 10

датащи скачать

ссылки URL