2SD2136 datasheet(1/2 Pages) SECOS

номер детали	2SD2136

подробное описание детали	NPN Plastic Encapsulated Transistor

PDF	2 Pages

Scroll/Zoom	100%

производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

Logo

1 / 2 page

Elektronische Bauelemente

2SD2136

3A , 60V

NPN Plastic Encapsulated Transistor

03-Dec-2013 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

3

Base

1

Emitter

Collector

2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low frequency power amplifier

Low Collector-Emitter Saturation Voltage VCE(sat)

High Forward Current Transfer Ratio hFE Which has

Satisfactory Linearity.

CLASSIFICATION OF hFE (1)

Product-Rank

2SD2136-P

2SD2136-Q

2SD2136-R

Range

40~90

70~150

120~250

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

60

V

Emitter to Base Voltage

VEBO

6

V

Collector Current - Continuous

IC

3

A

Collector Power Dissipation

PC

1.25

W

Thermal Resistance From Junction To Ambient

RθJA

100

°C / W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

60

-

V

IC=0.1mA, IE=0

Collector to Emitter Breakdown Voltage

1

V(BR)CEO

60

-

V

IC=30mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

6

-

V

IE=0.1mA, IC=0

Collector Cut – Off Current

ICBO

-

200

µA

VCB=60V, IE=0

Collector Cut – Off Current

ICEO

-

300

µA

VCE=60V, IB=0

Emitter Cut – Off Current

IEBO

-

1

mA

VEB=6V, IC=0

hFE (1)

40

-

250

VCE=4V, IC=1A

DC Current Gain

1

hFE (2)

10

-

VCE=4V, IC=3A

Collector to Emitter Saturation Voltage

1

VCE(sat)

-

1.2

V

IC=3A, IB=375mA

Collector Output Capacitance

1

VBE

-

1.8

V

VCE=4V, IC=3A

Transition Frequency

fT

-

30

-

MHz

VCE=5V, IC=100mA, f=10MHz

Note:

1.

Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.

1

1Emitter

2

2Collector

3

3Base

TO-126

C

D

B

A

E

N

F

L

G

K

J

H

M

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

7.40

7.80

H

1.10

1.50

B

2.50

2.90

J

0.45

0.60

C

10.60

11.00

K

0.66

0.86

D

15.30

15.70

L

2.10

2.30

E

3.70

3.90

M

1.17

1.37

F

3.90

4.10

N

3.00

3.20

G

2.29 TYP.

Аналогичный номер детали - 2SD2136

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SD2136	86Kb / 3P	Silicon NPN triple diffusion planar type
Panasonic Semiconductor	2SD2136	82Kb / 3P	Silicon PNP epitaxial planar type
Unisonic Technologies	2SD2136	114Kb / 3P	POWER TRANSISTOR
	2SD2136	168Kb / 4P	POWER TRANSISTOR
	2SD2136	169Kb / 4P	POWER TRANSISTOR

More results

Аналогичное описание - 2SD2136

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC4548	77Kb / 1P	NPN Plastic Encapsulated Transistor
	2SBA42	74Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC2668	140Kb / 2P	NPN Plastic-Encapsulated Transistor

More results

2SD2136 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SD2136 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Аналогичный номер детали - 2SD2136

Аналогичное описание - 2SD2136

Html Pages

1 2

датащи скачать

ссылки URL