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2SD2045 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали 2SD2045
подробное описание детали  Plastic-Encapsulate Transistors
PDF  4 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SD2045 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
2SD2045
NPN - PNP
Plastic-Encapsulate Transistors
19-Nov-2013 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transistor) @Ta = 25°C
Parameter
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
IC=100µA, IE=0
V(BR)CBO
40
-
-
V
Collector-Emitter Breakdown Voltage
IC =10mA, IB=0
V(BR)CEO
30
-
-
V
Collector-Emitter Breakdown Voltage
IC =1µA, VBE(OFF)= -0.5V
V(BR)CEX
40
-
-
V
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
V(BR)EBO
7
-
-
V
Collector Cutoff Current
VCB=32V, IE=0
ICBO
-
-
20
nA
Collector cut-off current
VCE=16V, R≦1K
ICER
-
-
20
nA
Emitter Cutoff Current
VEB=6V, IC=0
IEBO
-
-
20
nA
DC Current Gain
VCE=2V, IC=100mA
hFE
180
-
500
Collector-emitter Saturation Voltage
IC=750mA, IB=15mA
VCE(sat)
-
-
0.375
V
Base-Emitter Saturation Voltage
IC=750mA, IB=15mA
VBE(sat)
-
-
1.2
V
ELECTRICAL CHARACTERISTICS OF TR2 (PNP Transistor) @Ta = 25°C
Parameter
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
IC= -100µA, IE=0
V(BR)CBO
-40
-
-
V
Collector-Emitter Breakdown Voltage
IC = -10mA, IB=0
V(BR)CEO
-30
-
-
V
Collector-Emitter Breakdown Voltage
IC = -1µA, VBE(OFF)=0.5V
V(BR)CEX
-40
-
-
V
Emitter-Base Breakdown Voltage
IE= -100µA, IC=0
V(BR)EBO
-7
-
-
V
Collector Cutoff Current
VCB= -32V, IE=0
ICBO
-
-
-20
nA
Collector cut-off current
VCE= -16V, R≦1K
ICER
-
-
-20
nA
Emitter Cutoff Current
VEB= -6V, IC=0
IEBO
-
-
-20
nA
DC Current Gain
VCE= -2V, IC= -100mA
hFE
180
-
500
Collector-emitter Saturation Voltage
IC= -750mA, IB= -15mA
VCE(sat)
-
-
-0.375
V
Base-Emitter Saturation Voltage
IC= -750mA, IB= -15mA
VBE(sat)
-
-
-1.2
V



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