2SD669 datasheet(1/3 Pages) SECOS

номер детали	2SD669

подробное описание детали	NPN Type Plastic Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

Logo

1 / 3 page

n

Transition frequency

fT

VCE=5V, IC=150mA

140

MHz

Cob

VCB=10V , IE=0,f=1MHz

14

pF

Base-emitter voltage

VBE *

VCE=5V,IC= 150mA

1.5

V

Collector output capacitance

Rank

B

C

D

2SD669

60 - 120

100 - 200

160 - 320

2SD669A

60 - 120

100 - 200

----

0.76±0.1

Dimensions in Millimeters

Collector-emitter saturation voltage

VCE (sat) *

IC=500 mA, IB=50mA

1

V

hFE(1) *

VCE=5V, IC= 150mA

60

DC current gain

hFE(2) *

VCE=5V, IC= 500mA

2SD669

2SD669A

30

320

200

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 1 A ， IE=0

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 10mA ，IB=0

V

Collector-emitter breakdown voltage

V(BR)EBO

IE= 1 A， Ic=0

5

V

Collector cut-off current

ICBO

VCB=160 V , IE=0

10

μ

A

Emitter cut-off current

IEBO

VEB= 4V ,

IC =0

10

μ

A

180

2SD669

2SD669A

120

160

m

*

The 2SD669 and 2SD669A are grouped by h

FE1 as follows.

-Jul -2007 Rev. B

10

Page 1 of 3

FEATURES

Power dissipatio

PCM :

1mW（Tamb=25℃）

Collector current

ICM :

1.5 A

Collector-base voltage

V(BR)CBO : 180 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150

Collector-emitter voltage

VCEO

2SD669

2SD669A

: 120 V

: 160 V

CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Elektronische Bauelemente

2S

D669/2SD669A

NPN Type

Plastic Encapsulate Transistors

TO-126C

7.6±0.2

1: Emitter

2: Collector

3: Base

4.0±0.1

10.8±0.2

2.2±0.1

15.5±0.2

1.27±0.1

2.29 Typ.

4.58±0.1

0.5±0.1

1.3±0.2

2.7±0.2

3.1± 0.1

O

1

2

3

℃

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Аналогичный номер детали - 2SD669

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SD669	36Kb / 7P	Silicon NPN Epitaxial
Weitron Technology	2SD669	245Kb / 5P	NPN Epitaxial Planar Transistors
Unisonic Technologies	2SD669	77Kb / 5P	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
TRANSYS Electronics Lim...	2SD669	90Kb / 2P	Plastic-Encapsulated Transistors
Savantic, Inc.	2SD669	276Kb / 5P	Silicon NPN Power Transistors

More results

Аналогичное описание - 2SD669

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	2SC1815	188Kb / 2P	NPN Type Plastic Encapsulate Transistors
	2SC1815K	166Kb / 3P	NPN Type Plastic Encapsulate Transistors
	2SC2120	282Kb / 2P	NPN Type Plastic Encapsulate Transistors
Micro Commercial Compon...	BC337-16	125Kb / 3P	NPN Plastic-Encapsulate Transistors
SeCoS Halbleitertechnol...	S9018T	110Kb / 1P	NPN Plastic-Encapsulate Transistors
Micro Commercial Compon...	BCX55	298Kb / 3P	NPN Plastic-Encapsulate Transistors
Micro Commercial Compon...	KTC4075-O	311Kb / 4P	NPN Plastic-Encapsulate Transistors
Bruckewell Technology L...	A42	540Kb / 4P	NPN Plastic-Encapsulate Transistors
Bruckewell Technology L...	S9014	327Kb / 4P	NPN Plastic-Encapsulate Transistors
Micro Commercial Compon...	2SC2712-O	277Kb / 3P	NPN Plastic-Encapsulate Transistors

More results

2SD669 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SD669 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Аналогичный номер детали - 2SD669

Аналогичное описание - 2SD669

Html Pages

1 2 3

датащи скачать

ссылки URL