2SA727 datasheet(1/2 Pages) SECOS

номер детали	2SA727

подробное описание детали	PNP Silicon General Purpose Transistor

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Elektronische Bauelemente

2SA727

-3A, -40V

PNP Silicon General Purpose Transistor

23-May-2013 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

7 2 7

= Date Code

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

High current output up to -3A

Low saturation voltage

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

3K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-5

V

Collector Currrent

IC

-3

A

Total Power Dissipation @

TC=25°C

3

PD

1.2

W

Thermal Resistance Junction-ambient Max

1

RθJC

105

°C/W

Junction & Storage Temperature

TJ, TSTG

150, -55 ~ 150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

-40

-

V

IC= -100µA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

-30

-

V

IC= -1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

-5

-

V

IE= -10µA, IC=0

Collector cut-off current

ICBO

-

-0.1

µA

VCB= -30V, IE=0

Emitter cut-off current

IEBO

-

-0.1

µA

VEB= -5V, IC=0

-

-0.15

-0.25

IC= -0.5A, IB= -5mA

-

-0.85

-1

IC= -2A, IB= -20mA

Collector-emitter saturation voltage

2

VCE(sat)

-

-0.25

-0.5

V

IC= -2A, IB= -200mA

-

-0.8

-1.1

IC= -0.5A, IB= -5mA

Base-emitter saturation voltage

2

VBE(sat)

-

-1

-1.5

V

IC= -2A, IB= -200mA

30

-

VCE= -2V, IC= -20mA

DC current gain

2

hFE

160

-

320

VCE= -2V, IC= -1A

Transition frequency

fT

-

80

-

MHz

VCE= -5V, IC= -100mA,

f=100MHz

Collector output capacitance

Cob

-

55

-

pF

VCB= -10V, f=1MHz

NOTE:

1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 167℃/W when mounted on Min. copper pad.

2. The data tested by pulsed , pulse width≦300us , duty cycle ≦2%

3. The power dissipation is limited by 150 ℃junction temperature

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

0

0.10

B

2.60

3.00

H

0.60 REF.

C

1.40

1.80

J

0.12 REF.

D

1.10 MAX.

K

0°

10°

E

1.90 REF.

L

0.95 REF.

F

0.30

0.50

TSOP-6

B

L

F

H

C

J

D G

K

A

E

1

2

3

4

5

6

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