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DS2102SY датащи(PDF) 4 Page - Dynex Semiconductor

номер детали DS2102SY
подробное описание детали  Rectifier Diode
PDF  7 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DS2102SY датащи(HTML) 4 Page - Dynex Semiconductor

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DS2102SY
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
√I
F
Where
A = 0.402091
B = 0.011718
C = 6.48 x 10–5
D = 0.005977
these values are valid for T
j
= 125˚C for I
F
500A to 10000A
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
µC
2600
Q
S
Total stored charge
I
F = 2000A, dIRR/dt = 3A/µs
T
case = 175˚C, VR = 100V
Symbol
V
FM
I
RM
-
At V
RRM, Tcase = 175
oC
-
100
mA
-
1.0
V
At 3000A peak, T
case = 25
oC
Conditions
Min.
Max.
Units
At T
vj = 175˚C
-
I
rr
Peak reverse recovery current
V
TO
Threshold voltage
r
T
Slope resistance
0.0415
m
Ω
At T
vj = 175˚C
-
0.75
V
-
120
A
0.4
0.6
0.8
1.0
Instantaneous forward voltage, VF - (V)
0
2000
4000
6000
8000
10000
Measured under pulse conditions
Tj = 25˚C
Tj = 175˚C
1.2
0
2000
4000
6000
8000
Mean forward current, IF(AV) - (A)
0
2000
4000
6000
8000
10000
12000
10000
dc
Half wave
3 phase
6 phase



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