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DS2004SF датащи(PDF) 5 Page - Dynex Semiconductor |
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DS2004SF датащи(HTML) 5 Page - Dynex Semiconductor |
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5 / 7 page ![]() 5/7 www.dynexsemi.com DS2004SF Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.6 Surge (non-repetitive) forward current vs time (with 50% V RRM at T case 175˚C) 0.1 0.01 0.001 0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 Single side 0.038 0.040 0.042 0.043 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 100000 10000 1000 Conditions: Tj = 175˚C VR = 100V IF = 2000A IRM IF dIF/dt QS 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 10 Conditions: Tj = 175˚C VR = 100V IF = 2000A 110 1 2 3 5 10 20 50 10 20 30 40 50 60 2.2 2.6 1.8 3.0 3.4 ms Cycles at 50Hz Duration I2t = Î2 x t 2 I2t 3.8 4.2 |
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