SJV01N65B datasheet(2/2 Pages) SECOS

номер детали	SJV01N65B

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Elektronische Bauelemente

SJV01N65B

1A , 650V , RDS(ON) 14Ω

Ω

N-Channel Enhancement Mode Power MOSFET

07-May-2013 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Drain-Source Breakdown Voltage

V(BR)DSS

650

VGS=0, ID=250µA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

±100

VDS=0, VGS= ±20V

Drain-Source Leakage Current

IDSS

100

µA

VDS=600V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=0.6A

Forward On Voltage

VSD

1.5

IS=1A, VGS=0

Dynamic characteristics

Input Capacitance

Ciss

210

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

4.2

VGS=0

VDS=25V

f=1.0 MHz

Switching characteristics

Total Gate Charge

Gate-Source Charge

Qgs

2.7

Gate-Drain Charge

Qgd

VDS=480V,

VGS=10V,

ID=4A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=300V

ID=1A

VGS=10V

RG=18

Notes:

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

These parameters have no way to verify.

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