SGT6920NH datasheet(2/2 Pages) SECOS

номер детали	SGT6920NH

подробное описание детали	Dual-N Enhancement Mode MOSFET

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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SGT6920NH

6.8 A, 20 V, RDS(ON) 22 mΩ

Ω

Dual-N Enhancement Mode MOSFET

Elektronische Bauelemente

23-Jan-2013 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Gate-Threshold Voltage

VGS(th)

0.4

VDS=VGS, ID=250uA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS=±12V

Zero Gate Voltage Drain Current

IDSS

VDS=16V, VGS=0

VDS=16V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

VDS =5V, VGS=4.5V

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=1A

VGS=2.5V, ID=1A

VGS=1.8V, ID=1A

Forward Transconductance

gfs

VDS=10V, ID=1A

Diode Forward Voltage

VSD

0.7

IS=1A, VGS=0

Dynamic

Total Gate Charge

6.2

VDS=10V, VGS=4.5V,

ID=1A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

1.9

Turn-on Delay Time

Td(on)

VDD=10V, VGS=4.5V,

RGEN=10Ω, ID=1A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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