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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DG648BH45 датащи(PDF) 2 Page - Dynex Semiconductor |
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DG648BH45 датащи(HTML) 2 Page - Dynex Semiconductor |
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2 / 19 page  DG648BH45 2/19 SURGE RATINGS Conditions 16.0 1.28 x 106 kA A2s Surge (non-repetitive) on-state current I2t for fusing 10ms half sine. T j = 125 oC 10ms half sine. T j =125 oC di T/dt Critical rate of rise of on-state current 300 175 V/ µs Max. Units Rate of rise of off-state voltage dV D/dt 1000 V/ µs To 66% V DRM; VRG = -2V, Tj = 125 oC I TSM Symbol Parameter I2t V D = 4500V, IT = 2000A, Tj = 125 oC, I FG > 30A, Rise time > 1.0 µs A/ µs To 66% V DRM; RGK ≤ 1.5Ω, Tj = 125 oC GATE RATINGS Symbol Parameter Conditions V Units Max. 16 15 Min. - 20 - Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time 19 60 - 50 30 - - µs 100 100 V RGM This value maybe exceeded during turn-off I FGM P FG(AV) P RGM di GQ/dt t ON(min) t OFF(min) µs A/ µs kW W A THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max. Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.045 - 0.006 oC/W per contact Cathode side cooled Double side cooled Units - 0.018 oC/W Anode side cooled oC/W 0.03 Virtual junction temperature T OP/Tstg Operating junction/storage temperature range - Clamping force - 125 22.0 18.0 -40 kN oC/W Clamping force 20.0kN With mounting compound DC thermal resistance - junction to heatsink surface T vj 125 oC oC - - L S Peak stray inductance in snubber circuit nH 200 I T = 2000A, VDM = 4500V, Tj = 125˚C, di GQ/dt = 40A/µs, Cs = 2.0µF |
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