2SC5179 datasheet(1/12 Pages) NEC

номер детали	2SC5179

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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SILICON TRANSISTOR

FEATURES

•

Low current consumption and high gain

|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

•

Small Mini-Mold package

EIAJ: SC-70

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5179-T1

2SC5179-T2

3000 units/reel

*

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

30

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

2SC5179

Document No. P12103EJ2V0DS00 (2nd edition)

(Previous No. TC-2476)

Date Published

November 1996 N

Printed in Japan

©

1994

DATA SHEET

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

PACKAGE DIMENSIONS

(Units: mm)

CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Embossed tape, 8 mm wide, pin

No. 3 (Collector) facing

the perforations

Embossed tape, 8 mm wide, pins

No. 1 (Emitter) and No. 2 (Base)

facing the perforations

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

2

1

2.1±0.1

1.25±0.1

3

Аналогичный номер детали - 2SC5179

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SC5179	189Kb / 14P	SILICON TRANSISTOR 1994
	2SC5179-T1	189Kb / 14P	SILICON TRANSISTOR 1994
	2SC5179-T2	189Kb / 14P	SILICON TRANSISTOR 1994

More results

Аналогичное описание - 2SC5179

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5178	82Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5182	56Kb / 12P	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5186	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION

More results

2SC5179 датащи(PDF) 1 Page - NEC

2SC5179 датащи(HTML) 1 Page - NEC

Аналогичный номер детали - 2SC5179

Аналогичное описание - 2SC5179

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