CP331 datasheet(1/2 Pages) CENTRAL

номер детали	CP331

подробное описание детали	NPN - High Voltage Darlington Transistor Chip

PDF	2 Pages

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производитель	CENTRAL [Central Semiconductor Corp]

домашняя страница	http://www.centralsemi.com

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PROCESS CP331

Power Transistor

NPN - High Voltage Darlington Transistor Chip

GEOMETRY

PRINCIPAL DEVICE TYPE

CZT2000

GROSS DIE PER 5 INCH WAFER

11,055

PROCESS DETAILS

Die Size

39.4 x 39.4 MILS

Die Thickness

9.1 MILS

Base Bonding Pad Area

7.9 x 7.9 MILS

Emitter Bonding Pad Area

7.9 x 7.9 MILS

Top Side Metalization

Al-Si - 30,000Å

Back Side Metalization

Au-As - 18,000Å

BACKSIDE COLLECTOR

R0

www.centra lsemi.com

R0 (19-September 2011)

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Central Semiconductor C...	CP331-CZT2000	859Kb / 4P	NPN - High Voltage Darlington Transistor Die R0 6-June 2016

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Central Semiconductor C...	CP331-CZT2000	859Kb / 4P	NPN - High Voltage Darlington Transistor Die R0 6-June 2016