MMSTA05 datasheet(1/1 Pages) DIODES

номер детали	MMSTA05

подробное описание детали	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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производитель	DIODES [Diodes Incorporated]

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DS30168 Rev. B-1

1 of 1

MMSTA05/MMSTA06

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary PNP Type Available

(MMSTA55/MMSTA56)

·

Ideal for Medium Power Amplification and

Switching

·

Ultra-Small Surface Mount Package

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

C

E

B

Mechanical Data

·

Case: SOT-323, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

MMSTA05 Marking K1H, K1G

·

MMSTA06 Marking K1G

·

Weight: 0.006 grams (approx.)

SOT-323

Dim

Min

Max

A

0.30

0.40

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

E

0.30

0.40

G

1.20

1.40

H

1.80

2.20

J

0.0

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

All Dimensions in mm

Characteristic

Symbol

MMSTA05

MMSTA06

Unit

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current - Continuous (Note 1)

IC

500

mA

Power Dissipation (Note 1)

Pd

200

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

625

K/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

MMSTA05

MMSTA06

V(BR)CBO

60

80

¾

V

IC = 100

mA, IE = 0

Collector-Emitter Breakdown Voltage

MMSTA05

MMSTA06

V(BR)CEO

60

80

¾

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

¾

V

IE = 100

mA, IC = 0

Collector Cutoff Current

MMSTA05

MMSTA06

ICBO

¾

100

nA

VCB = 60V, IE = 0

VCB = 80V, IE = 0

Collector Cutoff Current

MMSTA05

MMSTA06

ICES

¾

100

nA

VCE = 60V, IBO = 0V

VCE = 80V, IBO = 0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

100

¾¾

IC = 10mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

0.25

V

IC = 100mA, IB = 10mA

Base- Emitter Saturation Voltage

VBE(SAT)

¾

1.2

V

IC = 100mA, VCE = 1.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

100

¾

MHz

VCE = 2.0V, IC = 10mA,

f = 100MHz

Note:

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width

£ 300ms, duty cycle £ 2%.

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