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MMDT5451 датащи(PDF) 2 Page - Diodes Incorporated

номер детали MMDT5451
подробное описание детали  COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  2 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMDT5451 датащи(HTML) 2 Page - Diodes Incorporated

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DS30171 Rev. C-1
2 of 2
MMDT5451
Electrical Characteristics, NPN 5551 Section
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
180
¾
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
80
80
30
¾
250
¾
¾
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
¾
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
VCE = 5.0V, IC = 200
mA,
RS = 1.0k
W, f = 1.0kHz
Electrical Characteristics, PNP 5401 Section @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-160
¾
V
IC = -100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-150
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
-50
nA
mA
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
¾
-50
nA
VEB = -3.0V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
50
60
50
¾
240
¾
¾
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.2
-0.5
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
40
200
¾
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = -10V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
VCE = -5.0V, IC = -200
mA,
RS = 10
W, f = 1.0kHz
Notes:
3. Pulse test: Pulse width
£ 300ms, duty cycle £ 2%.



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