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MMDT3906 датащи(PDF) 2 Page - Diodes Incorporated

номер детали MMDT3906
подробное описание детали  DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMDT3906 датащи(HTML) 2 Page - Diodes Incorporated

  MMDT3906 Datasheet HTML 1Page - Diodes Incorporated MMDT3906 Datasheet HTML 2Page - Diodes Incorporated MMDT3906 Datasheet HTML 3Page - Diodes Incorporated  
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DS30124 Rev. 5 - 2
2 of 3
MMDT3906
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
¾
V
IC = -10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
Base Cutoff Current
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
-0.65
¾
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
k
W
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
3.0
60
mS
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
¾
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
225
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
tf
¾
75
ns
Notes:
3. Short duration test pulse used to minimize self-heating.
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3N YM
Marking Information
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W



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