The information in this document is subject to change without notice.

SILICON TRANSISTOR

2SC4954

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

•

Low Noise, High Gain

•

Low Voltage Operation

•

Low Feedback Capacitance

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC4954-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side of the

tape.

2SC4954-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face to perforation

side of the tape.

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

60

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

©

1993

DATA SHEET

Caution; Electrostatic Sensitive Device.

1.5

2.8±0.2

+0.1

3

2

1

Marking

PACKAGE DIMENSIONS

in millimeters

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

Document No. P10376EJ2V0DS00 (2nd edition)

(Previous No. TD-2405)

Date Published July 1995 P

Printed in Japan