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MMDT2227 датащи(PDF) 2 Page - Diodes Incorporated

номер детали MMDT2227
подробное описание детали  COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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MMDT2227 датащи(HTML) 2 Page - Diodes Incorporated

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DS30122 Rev. B-2
2 of 4
MMDT2227
Electrical Characteristics, NPN2222A Section
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
10
nA
mA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150
°C
Collector Cutoff Current
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
¾
10
nA
VEB = 3.0V, IC = 0
Base Cutoff Current
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC = 100
mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55
°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = 10V, IC = 100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
¾
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
¾
25
ns
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
£ 300ms, duty cycle £ 2%.



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