MMBTA63 datasheet(1/2 Pages) DIODES

номер детали	MMBTA63

подробное описание детали	PNP SURFACE MOUNT DARLINGTON TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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1 / 2 page

DS30055 Rev. 3 - 2

1 of 2

MMBTA63 / MMBTA64

www.diodes.com

MMBTA63 / MMBTA64

PNP SURFACE MOUNT DARLINGTON TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary NPN Types Available

(MMBTA13 / MMBTA14)

·

Ideal for Medium Power Amplification and

Switching

·

High Current Gain

Characteristic

Symbol

MMBTA63

MMBTA64

Unit

Collector-Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-10

V

Collector Current - Continuous (Note 1)

IC

-500

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

417

°C/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

TOP VIEW

M

B C

C

B

E

H

G

D

K

Mechanical Data

·

Case: SOT-23, Molded Plastic

·

Case material - UL Flammability Rating

Classification 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020A

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

MMBTA63 Marking (See Page 2): K2E, K3E

·

MMBTA64 Marking (See Page 2): K3E

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.008 grams (approx.)

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

-30

¾

V

IC = -100

mAVBE = 0V

Collector Cutoff Current

ICBO

¾

-100

nA

VCB = -30V, IE = 0

Emitter Cutoff Current

IEBO

¾

-100

nA

VEB = -10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

MMBTA63

MMBTA64

MMBTA63

MMBTA64

hFE

5,000

10,000

20,000

¾¾

IC = -10mA, VCE = -5.0V

IC = -100mA, VCE = -5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

-1.5

V

IC = -100mA, IB = -100

mA

Base- Emitter Saturation Voltage

VBE(SAT)

¾

-2.0

V

IC = -100mA, VCE = -5.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

125

¾

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

E

B

C

Аналогичный номер детали - MMBTA63

производитель	номер детали	датащи	подробное описание детали
Transys Electronics	MMBTA63	132Kb / 1P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Samsung semiconductor	MMBTA63	64Kb / 2P	PNP (DARLINGTON TRANSISTOR)
Fairchild Semiconductor	MMBTA63	29Kb / 2P	PNP Darlington Transistor
KEC(Korea Electronics)	MMBTA63	184Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLING TON TRANSISTOR)
Diodes Incorporated	MMBTA63	79Kb / 3P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR DS30055 Rev. 7 - 2

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Аналогичное описание - MMBTA63

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Transys Electronics	MMBTA63	132Kb / 1P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR
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