MMBTA13 datasheet(1/2 Pages) DIODES

номер детали	MMBTA13

подробное описание детали	NPN SURFACE MOUNT DARLINGTON TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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1 / 2 page

DS30047 Rev. 4 - 2

1 of 2

MMBTA13 / MMBTA14

www.diodes.com

MMBTA13 / MMBTA14

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary PNP Types Available

(MMBTA63 / MMBTA64)

·

Ideal for Medium Power Amplification and

Switching

·

High Current Gain

Characteristic

Symbol

MMBTA13

MMBTA14

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Current - Continuous (Note 1)

IC

300

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

417

°CW

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

TOP VIEW

M

B C

C

B

E

H

G

D

K

Mechanical Data

·

Case: SOT-23, Molded Plastic

·

Case material - UL Flammability Rating

Classification 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020A

·

Terminals: Solderable per MIL-STD-202, Method

208

·

Terminal Connections: See Diagram

·

MMBTA13 Marking (See Page 2): K2D, K3D

·

MMBTA14 Marking (See Page 2): K3D

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.008 grams (approx.)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

E

B

C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

30

¾

V

IC = 100

mAVBE = 0V

Collector Cutoff Current

ICBO

¾

100

nA

VCB = 30V, IE = 0

Emitter Cutoff Current

IEBO

¾

100

nA

VEB = 10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

MMBTA13

MMBTA14

MMBTA13

MMBTA14

hFE

5,000

10,000

20,000

¾¾

IC = 10mA, VCE = 5.0V

IC = 100mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

1.5

V

IC = 100mA, IB = 100

mA

Base- Emitter Saturation Voltage

VBE(SAT)

¾

2.0

V

IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

8.0 Typical

pF

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

15 Typical

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

fT

125

¾

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Note:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

Аналогичный номер детали - MMBTA13

производитель	номер детали	датащи	подробное описание детали
Transys Electronics	MMBTA13	139Kb / 1P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Samsung semiconductor	MMBTA13	26Kb / 1P	NPN (DARLINGTON AMPLIFIER TRANSISTOR)
Fairchild Semiconductor	MMBTA13	605Kb / 13P	NPN Darlington Transistor
KEC(Korea Electronics)	MMBTA13	65Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)
Micro Commercial Compon...	MMBTA13	166Kb / 4P	NPN Darlington Amplifier Transistor

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Аналогичное описание - MMBTA13

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Diodes Incorporated	MMBTA28	62Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR DS30367 Rev. 2 - 2
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Micro Commercial Compon...	BCV47	381Kb / 4P	NPN Surface Mount Darlington Transistor
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