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MMBT2222AT датащи(PDF) 2 Page - Diodes Incorporated

номер детали MMBT2222AT
подробное описание детали  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBT2222AT датащи(HTML) 2 Page - Diodes Incorporated

  MMBT2222AT Datasheet HTML 1Page - Diodes Incorporated MMBT2222AT Datasheet HTML 2Page - Diodes Incorporated MMBT2222AT Datasheet HTML 3Page - Diodes Incorporated  
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DS30268 Rev. 2 - 2
2 of 3
MMBT2222AT
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
35
50
75
100
40
¾
¾
¾
¾
¾
¾
IC = 100
mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Input Impedance
hie
0.25
1.25
k
W
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Voltage Feedback Ratio
hre
¾
4.0
X 10-4
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Small-Signal Current Gain
hfe
75
375
¾
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Output Admittance
hoe
25
200
mS
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Noise Figure
NF
¾
4.0
dB
VCE = 10 Vdc, IC = 100
mAdc,
RS = 1.0 k ohms, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
¾
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
¾
25
ns
Storage Time
ts
¾
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
¾
60
ns
Notes:
2.
Short duration test pulse used to minimize self-heating effect.
3.
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
MMBT2222AT-7
SOT-523
3000/Tape & Reel
(Note 3)
Ordering Information
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1PYM
Marking Information
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W



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