IXTY05N100 datasheet(1/4 Pages) IXYS

номер детали	IXTY05N100

подробное описание детали	High Voltage Power MOSFET

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

750

mA

I

DM

T

C = 25°C, pulse width limited by TJM

3A

I

A

T

C = 25°C1

A

E

AS

T

C = 25°C

100

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ =150°C

3

V/ns

P

D

T

C = 25°C40

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

F

C

Mounting force

1.13 / 10

Nm/lb.in.

Weight

TO-251

0.40

g

TO-252

0.35

g

DS100102(01/09)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

25

μA

V

GS = 0V

T

J = 125°C

500

μA

R

DS(on)

V

GS = 10V, ID = 375mA, Note 1

17

Ω

High Voltage

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTU05N100

IXTY05N100

V

DSS

= 1000V

I

D25

= 750mA

R

DS(on) ≤

≤≤≤≤ 17Ω

Ω

Features

International standard packages

Fast switching times

Avalanche Rated

Rugged polysilicon gate cell structure

Extended FBSOA

Applications

Switch-mode and resonant-mode

power supplies

Flyback inverters

DC choppers

Advantages

High power density

Space savings

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-252

D (TAB)

S

G

TO-251

D

S

G

D (TAB)

Аналогичный номер детали - IXTY05N100

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Аналогичный номер детали - IXTY05N100

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