DT014L datasheet(2/4 Pages) DIODES

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S11603 Rev. C-4

2 of 4

DT014L

Electrical Characteristics25°C unless otherwise specified

Notes:

2. Pulse Test: Pulse width

l 300µs, duty cycle l 2.0%.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

Tj =55°C

IDSS

——

250

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage, Forward

IGSSF

—

100

VGS = 20V, VDS = 0V

Gate-Body Leakage, Reverse

IGSSR

—

-100

VGS = -20V, VDS = 0V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Tj = 125°C

VGS(th)

1.0

0.8

1.5

1.2

3.0

2.0

VDS =VGS, ID = 250µA

Static Drain-Source On-Resistance

Tj = 125°C

RDS (ON)

—

0.17

0.25

0.12

0.2

0.36

0.16

VGS = 4.5V, ID = 2.6A

VGS = 10V, ID = 3.4A

On-State Drain Current

ID(ON)

5.0

——

VGS = 4.5, VDS = 5.0V

VGS = 10V, VDS = 5.0V

Forward Transconductance

gFS

—

4.0

—

VGS = 5.0V, ID = 2.6A

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

—

214

—

VDS = 30V, VGS = 0V

f = 1.0MHz

Output Capacitance

COSS

—70—

Reverse Transfer Capacitance

CRSS

—27—

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

tD(ON)

—

6.0

VDD = 30V, ID = 3.0A

VGEN = 10V, RGEN = 12

Turn-On Rise Time

—14

Turn-Off Delay Time

tD(OFF)

—15

Turn-Off Fall Time

—10

Total Gate Charge

—

3.6

5.0

VDS = 10V, ID = 2.6A.

VGS = 4.5V

Gate-Source Charge

Qgs

—

0.8

—

Gate-Drain Charge

Qgd

—

1.4

—

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode

Forward Current

—

2.3

Drain-Source Diode Forward Voltage

(Note 2)

VSD

—

0.85

1.3

VGS = 0V, IS = 2.3A

Reverse Recovery Time

trr

—

140

VGS = 0V, IF = 2.3A,

dlF / dt = 100 A/µs

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