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DMDT9922 датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMDT9922
подробное описание детали  PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR
PDF  2 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMDT9922 датащи(HTML) 2 Page - Diodes Incorporated

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UNAPPROVED
NOT
FOR
DISTRIBUTION
D
S30142 Rev. 1P-5
2 of 2
DMDT9922
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
-50
¾¾
V
IC = -50
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾¾
V
IE = -50
mA, IC = 0
Collector-Base Leakage Current
ICBO
¾
-0.3
-500
nA
VCB = -30V
Emitter-Base Leakage Current
IEBO
¾¾
-500
nA
VEB = -4.0V
Collector-Emitter Leakage Current
ICES
¾
-4
-1000
nA
VCE = -40V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
300
450
555
¾
IC = -1.0mA, VCE = -6.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
VCE(SAT)
¾
¾
-0.1
-0.1
-0.5
¾
V
V
IC = -50mA, IB = -5.0mA
IC = -1mA, IB = -0.1mA
Base-Emitter Impedance
rbe
¾
-0.5
¾W
IC = -10
mA to -1mA
Emitter-Base Offset Voltage
VOS
¾
10
¾mV
VCB = 0V, IC = -1
mA to -1mA
Change in Emitter-Base Offset Voltage vs. Collector-Base
Voltage (CMRR)
DVOS/
DVCB
¾
10
¾mV
VCB = 0V, IC = -1
mA to -1mA
Change in Emitter-Base Offset Voltage vs.
Collector-Current
DVOS/
DIC
¾
5
¾mV
VCB = 0V, IC = -10
mA to -1mA
Average Offset Voltage Drift
TC VOS
¾
0.5
¾mV/°C IC = -10mA to -1mA
Emitter-Base Offset Current
IOS
¾
8
¾
nA
IC = -10
mA, VCB = 0V
Change in Emitter-Base Offset Current vs. Collector-Base
Voltage
DIOS/
DVCB
¾
30
¾
nA
VCB = 0 to -50V
Average Offset Current Drift
TC IOS
¾
50
¾
pA
/°C IC = -10mA
Collector-Collector Leakage Current
ICC
¾
35
¾
pA
VCE = -40V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
-4
15
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾¾
70
pF
VEB = -0.5V, IC = 0, f = 1MHz
Output Conductance
hOE
¾
10
¾mS
IC = -1mA, VCE = -5V
Current Gain-Bandwidth Product
fT
170
¾
MHz
VCE = -12V, IC = -2.0mA,
f = 100MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
£ 300ms, duty cycle £ 2%.



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