CYStech Electronics Corp.

Spec. No. : C457FP

Issued Date : 2008.11.19

Revised Date :2013.12.31

Page No. : 2/5

MBR20100AFP

CYStek Product Specification

Maximum Ratings and Electrical Characteristics (Per Diode Leg)

(Rating at 25

°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.)

Parameter

Symbol

Min.

Typ.

Max.

Units

Maximum Recurrent peak reverse voltage

100

V

Maximum RMS voltage

70

V

Maximum DC blocking voltage

100

V

0.85

0.67

0.75

0.95

Maximum instantaneous

forward voltage at

(Note 1)

0.85

V

Per Diode

10

Maximum Average forward

20

A

20

A

Peak forward surge current @8.3ms single half

sine wave superimposed on rated load (JEDEC

method)

150

A

3.0

A

5.0

μA

Maximum instantaneous

reverse current at

1.0

mA

dV/dt

10,000

V/μs

Typical junction capacitance @ f=1MHz and applied

4V reverse voltage

260

pF

8000

V

Storage temperature range

-55

+175

℃

Operating junction temperature range

-65

+175

℃

Notes : 1. 2.0μs pulse width, f=1.0kHz

2. Human body model, 1.5kΩ in series with 100pF

Thermal Data

Parameter

Symbol

Value

Unit

Maximum Thermal Resistance, Junction-to-case, per diode

3.5

°C/W

Lead Temperature for Soldering Purposes : 1/8” from Case for 5seconds

260

°C

Ordering Information

Device

Package

Shipping

MBR20100AFP-0-UB-S

TO-220FP

(RoHS compliant package)

50 pcs / tube, 20 tubes/box, 10 boxes/carton

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name