Document No. P11698EJ1V0DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

SILICON TRANSISTOR

2SC3810

FEATURES

• The 2SC3810 is an NPN silicon epitaxial dual transistor having

a large-gain-bandwidth product performance in a wide operating

current range.

• Dual chips in one package can achieve high performance for

differential amplifiers and current mode logic (CML) circuits.

°°°°°C)

°°°°°C)

NPN SILICON EPITAXIAL TRANSISTOR

FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS

INDUSTRIAL USE

PACKAGE DIMENSIONS (in millimeters)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

65/unit

mA

Total Power Dissipation

240/unit

mW

Thermal Resistance (junction to case)

90/unit

°C/W

Junction Temperature

200

°C

Storage Temperature

-65 to +200

°C

5.0 MIN.

3

4

2

1

5

3

5

E

41

2

(#492C)

5.0 MIN.

0.6

± 0.1

3.5

+0.3

-0.2

PIN CONNECTIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector to Base Breakdown Voltage

µA20

V

Emitter to Base Breakdown Voltage

1.5

V

Collector to Emitter Breakdown Voltage

∞

10

V

Collector Cut-off Current

1.0

µA

Emitter Cut-off Current

1.0

µA

DC Current Gain

50

100

250

0.6

1.0

Difference of Base to Emitter Voltage

30

mV

Gain Bandwidth Product

7

8

GHz

Feedback Capacitance

0.5

1.0

pF

2. Measured using a single-type device (equivalent to the 2SC3604).

3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to

the guard terminal of the bridge.

©

1996

DATA SHEET