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2N7002DW датащи(PDF) 2 Page - Diodes Incorporated

номер детали 2N7002DW
подробное описание детали  DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2N7002DW датащи(HTML) 2 Page - Diodes Incorporated

  2N7002DW Datasheet HTML 1Page - Diodes Incorporated 2N7002DW Datasheet HTML 2Page - Diodes Incorporated 2N7002DW Datasheet HTML 3Page - Diodes Incorporated  
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D
S30120 Rev. 2P-1
2 of 3
2N7002DW
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
60
70
¾
V
VGS = 0V, ID = 10
mA
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
¾¾
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
¾¾
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
1.0
¾
2.0
V
VDS =VGS, ID =-250
mA
Static Drain-Source On-Resistance
@ Tj = 25°C
@Tj = 125°C
RDS (ON)
¾
3.2
4.4
7.5
13.5
W
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
¾
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
¾¾
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
¾
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
¾
11
25
pF
Reverse Transfer Capacitance
Crss
¾
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
¾
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150
W,VGEN = 10V,
RGEN = 25
W
Turn-Off Delay Time
tD(OFF)
¾
11
20
ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
£ 300ms, duty cycle £ 2%.



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