VNP7N04-E datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (

∗∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V

Id = 3.5 A

Vgen = 10 V

Rgen = 10

Ω

(see figure 3)

130

100

120

200

100

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V

Id = 3.5 A

Vgen = 10 V

Rgen = 1000

Ω

(see figure 3)

140

0.4

2.5

280

0.8

µs

(di/dt)on

Turn-on Current Slope

VDD = 15 V

ID = 3.5 A

Vin = 10 V

Rgen = 10

Ω

µs

Total Input Charge

VDD = 12 V

ID = 3.5 A

Vin = 10 V

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VSD (

∗)

Forward On Voltage

ISD = 3.5 A

Vin = 0

1.6

trr (

∗∗)

Qrr (

∗∗)

IRRM (

∗∗)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 3.5 A

di/dt = 100 A/

µs

VDD = 30 V

Tj = 25

(see test circuit, figure 5)

0.2

3.6

µC

PROTECTION

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Ilim

Drain Current Limit

Vin = 10 V

VDS = 13 V

Vin = 5 V

VDS = 13 V

tdlim (

∗∗) Step Response

Current Limit

Vin = 10 V

Vin = 5 V

µs

Tjsh (

∗∗) Overtemperature

Shutdown

150

Tjrs (

∗∗)

Overtemperature Reset

135

Igf (

∗∗)

Fault Sink Current

Vin = 10 V

VDS = 13 V

Vin = 5 V

VDS = 13 V

Eas (

∗∗)

Single Pulse

Avalanche Energy

starting Tj = 25

VDD = 20 V

Vin = 10 V

Rgen = 1 K

Ω L = 30 mH

0.4

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

∗∗) Parameters guaranteed by design/characterization

VNP7N04

3/11

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