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IXKC25N80C датащи(PDF) 2 Page - IXYS Corporation

номер детали IXKC25N80C
подробное описание детали  N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface
PDF  4 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXKC25N80C датащи(HTML) 2 Page - IXYS Corporation

  IXKC25N80C Datasheet HTML 1Page - IXYS Corporation IXKC25N80C Datasheet HTML 2Page - IXYS Corporation IXKC25N80C Datasheet HTML 3Page - IXYS Corporation IXKC25N80C Datasheet HTML 4Page - IXYS Corporation  
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© 2008 IXYS All rights reserved
2 - 4
20080526a
IXKC 25N80C
IXYS reserves the right to change limits, test conditions and dimensions.
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
I
S
V
GS = 0 V
34
A
V
SD
I
F = 35 A; VGS = 0 V
1.0
1.2
V
t
rr
Q
RM
I
RM
I
F = 35 A; -diF/dt = 200 A/µs; VR = 400 V
550
30
100
ns
µC
A
Component
Symbol
Conditions
Maximum Ratings
T
VJ
T
stg
operating
-55...+150
-55...+150
°C
°C
V
ISOL
RMS, lead-to-tab, 50/60 Hz, f = 1 minute
2500
V~
F
C
mounting force
11-65/2.4-11
N/lb.
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
thCH
with heatsink compound
0.15
K/W
Weight
2.7
g
ISOPLUS220TM Outline
SYM
A2
b4
D1
b2
L1
E1
E
1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3.
Product Outline TO-273 except D and D1 dimension.
2. This drawing will meet dimensional requirement of JEDEC SS
NOTE:
T
L
e
b
c
D
A
11.00
10.00
.433
.394
13.00
3.00
42.5
7.50
.118
.100
.512
.295
.138
.571
.335
BASIC
14.50
3.50
8.50
47.5
2.55 BASIC
2.50
4.00
2.35
12.00
15.00
.051
.035
.028
.472
.591
.093
.049
.039
.512
.630
.100
.065
INCHES
MIN
.098
.157
MAX
.118
.197
1.30
0.90
2.55
1.65
1.00
0.70
13.00
16.00
1.25
MILLIMETERS
MAX
MIN
3.00
5.00
2X b2
A2
2X b4
2X e
3X b
1
2
3
c
E
A
* Note 1



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