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DS9503 датащи(PDF) 3 Page - Dallas Semiconductor

номер детали DS9503
подробное описание детали  ESD Protection Diode with Resistors
PDF  3 Pages
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производитель  DALLAS [Dallas Semiconductor]
домашняя страница  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS9503 датащи(HTML) 3 Page - Dallas Semiconductor

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DS9503
3 of 3
102199
PHYSICAL SPECIFICATIONS
Size
See mechanical drawing
Weight
0.5 grams
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
–40°C to +85°C
Storage Temperature
–55°C to +125°C
Soldering Temperature
260°C for 10 seconds
Continuous DC Current Through Package
80 mA
∗ This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability
ELECTRICAL CHARACTERISTICS
(-40
°C to +85°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Leakage Current
IL
30
100
nA
2
Avalanche Voltage
VAV
7.4
7.8
V
1,3
Trigger Voltage
VTRIGGER
9.0
9.5
V
1
Trigger Current
ITRIGGER
600
1000
mA
Holding Voltage
VHOLD
5.5
V
1
Holding Current
IHOLD
30
mA
Forward Voltage (-10 mA)
VF
-0.7
-0.8
V
4
Forward Current (-0.7V)
IF
-10
-100
mA
4
Maximum Peak Current
IPP
2.0
A
5
Continuous Current Through Diode
ICC
±80
mA
Isolation Resistance
RI
5
CAPACITANCE
(tA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Junction Capacitance (5V)
CJ5
40
pF
1
Junction Capacitance (0V)
CJ0
70
pF
1
THERMAL RESISTANCE
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Junction To Package
RΘ JC
75
K/W
Junction To Ambient
RΘ JA
200
K/W
NOTES:
1. All voltages are referenced from Cathode to Anode.
2. At 7.0V.
3. At 0.3
µA.
4. Typical values at room temperature.
5. See pulse specification.



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