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102199

SPECIAL FEATURES

§ Zener characteristic with voltage snap–back

to protect against ESD hits

§ High avalanche voltage, low leakage and low

capacitance avoid signal attenuation

§ Compatible to all 5V logic families

§ Space saving, low inductance TSOC surface

mount package

§ Symmetric dual–port bondout to maximize

energy dissipation in protection device

§ Industrial temperature range

SYMBOL AND CONVENTIONS

PACKAGE OUTLINE

ORDERING INFORMATION

DS9502P

6-lead TSOC package

DESCRIPTION

This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable

memory modules. The memory chips used for these modules have already a strong ESD–protection

structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than

27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the

DS9502 will eventually fail “short” thus preventing further damage.

During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds

the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher

amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage

is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the

holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a

small leakage current.

VCA

A

IC

C

6

1

5

2

4

3

TOP VIEW

TSOC SURFACE MOUNT PACKAGE

3.7 X 4.0 X 1.5 mm

See Mech. Drawings

Section

SIDE VIEW

DS9502

ESD Protection Diode

www.dalsemi.com