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DS75 датащи(PDF) 11 Page - Dallas Semiconductor |
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DS75 датащи(HTML) 11 Page - Dallas Semiconductor |
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11 / 13 page ![]() DS75 11 of 13 ABSOLUTE MAXIMUM RATINGS* Voltage on VDD, Relative to Ground –0.3V to +7.0V Voltage on any other pin, Relative to Ground –0.3V to (V DD + 0.3V) Operating Temperature –55 °C to +125°C Storage Temperature –55 °C to +125°C Soldering Temperature 260 °C for 10 seconds * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. The Dallas Semiconductor DS75 is built to the highest quality standards and manufactured for long term reliability. All Dallas Semiconductor devices are made using the same quality materials and manufacturing methods. However, the DS75 is not exposed to environmental stresses, such as burn–in, that some industrial applications require. For specific reliability information on this product, please contact the factory in Dallas at (972) 371–4448. RECOMMENDED DC OPERATING CONDITIONS (-55°C to +125°C; 2.7V ≤ V DD ≤ 5.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES Supply Voltage VDD 2.7 5.5 V DC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; 2.7V ≤ V DD ≤ 5.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES Input Logic High VIH 0.7VDD VDD+0.5 V 1 Input Logic Low VIL -0.5 0.3VDD V1 VOL1 3 mA sink current 0 0.4 SDA Output Logic Low Voltage VOL2 6 mA sink current 0 0.6 V1 O.S. Saturation Voltage VOL 4 mA sink current 0.8 V 1, 9 Input current each I/O pin 0.4 < VI/O< 0.9 VDD -10 +10 µA 2 I/O Capacitance CI/O 10 pF Standby Current IDD1 1 µA 3, 4 Active Temp. Conversions 1000 Active Current IDD Communica- tion only 100 µA 3, 4 |
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