DS60

2 of 4

102299

ABSOLUTE MAXIMUM RATINGS*

GND -0.3V to +6.5V

Output Current

5.0 mA

Operating Temperature

-40°C to +125°C

Storage Temperature

-55°C to +150°C

ESD Susceptibility (Human Body Model)

2kV

Soldering Temperature (Note 2)

215°C for 60 seconds (Vapor Phase)

220°C for 15 seconds (IR)

*

This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods of time may affect reliability.

The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term

reliability. All Dallas Semiconductor devices are made using the same quality materials and

manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,

that some industrial applications require. For specific reliability information on this product, please

contact the factory in Dallas at (972) 371–4448.

RECOMMENDED DC OPERATING CONDITIONS

(-40°C to +125°C; 2.7V

≤V

DD

≤5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

Supply Voltage

2.7

5.5

V

1

DC ELECTRICAL CHARACTERISTICS:

Power Supply (Note 3)

(-40°C to +125°C; 2.7V

≤V

DD

≤5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

Supply Current

80

125

µA

DC ELECTRICAL CHARACTERISTICS:

Temperature Sensor and Voltage Output (Note 3)

(-40°C to +125°C; 2.7V

≤V

DD

≤5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

-40°C

≤T

A

≤125°C

±3

Thermometer Error

0°C

≤T

A

≤85°C

±2

°C

4

T = 0°C

424

mV

1

Sensor Gain

∆V/∆T

6.0

6.25

6.5

mV/°C

Nonlinearity

±0.8

°C

5

2.7V

≤V

DD

≤3.3V

±2.0

mV

Power Supply

Regulation

3.0V

≤V

DD

≤5.5V

±0.25

mV/V

Sensor Drift

±0.25

°C

6

Output Impedance

800

Ω