©

1996

DATA SHEET

SILICON TRANSISTOR

2SC1927

DESCRIPTION

The 2SC1927 is an NPN silicon epitaxial dual transistor that

consists of two chips equivalent to the 2SC1275, and is designed for

differential amplifier and ultra-high-speed switching applications.

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

30

V

Collector to Emitter Voltage

14

V

Emitter to Base Voltage

3.0

V

Collector Current

50

mA

Collector Dissipation

200

mW/unit

Total Power Dissipation

300

mW

Junction Temperature

200

˚C

Storage Temperature

–65 to +200

˚C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

50

nA

Emitter Cut-off Current

50

nA

DC Current Gain

25

80

200

0.8

1.0

Difference of Base to Emitter Voltage

30

mV

Gain Bandwidth Product

1.5

2.0

GHz

Output Capacitance

1.1

1.5

pF

2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the

2SC1275).

3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should

be connected to the guard terminal of the bridge.

Document No. P11671EJ1V0DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

NPN SILICON EPITAXIAL DUAL TRANSISTOR

FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

5.0 MIN.

3.5

+0.3

–0.2

5.0 MIN.

3

2

1

4

5

6

3

2C

4

1C

6

1B

1

2B

5

1E

2

2E

PIN CONNECTIONS