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BAS70AS3 датащи(PDF) 2 Page - Cystech Electonics Corp. |
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BAS70AS3 датащи(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 6 page ![]() CYStech Electronics Corp. Spec. No. : C248S3 Issued Date : 2012.07.09 Revised Date : Page No. : 2/6 BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 CYStek Product Specification Absolute Maximum Ratings Symbol Parameter Conditions Min Max Unit Per diode VR continuous reverse voltage - 70 V IF continuous forward current - 70 mA IFRM repetitive peak forward current tp≤1s, δ≤0.5 - 100 mA Ptot total power dissipation (per package) Tamb≤25℃ - 200 mW Tstg storage temperature -65 +150 ℃ Tamb operating ambient temperature -55 +125 ℃ Characteristics (Ta=25 °C, unless otherwise specified) Parameter Symbol Condition Min. Max. Unit Reverse Breakdown Voltage VBR IR=10μA 70 - V VF(1) IF=1mA - 410 mV Forward Voltage (Note 1) VF(2) IF=15mA - 1000 mV Reverse Leakage Current (Note 1) IR VR=50V - 100 nA Diode Capacitance CD VR=0V, f=1MHz - 2 pF Reverse Recovery Time trr when switched from IF= 10mA to IR=10mA; RL=100 Ω; measured at IR=1mA - 5 ns Notes : 1.pulse test, tp=300μs, duty cycle<2%. Thermal Characteristics Symbol Parameter Conditions Value Unit Rth j-a thermal resistance from junction to ambient note 1 625 K/W Note 1 : Refer to SOT-323 standard mounting conditions. |
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