BAR40CS3 datasheet(2/6 Pages) CYSTEKEC

2 / 6 page

CYStech Electronics Corp.

Spec. No. : C302S346.13

Revised Date : 2012.02.10

Page No. : 2/7

BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3

CYStek Product Specification

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature

Tstg.................................................................................................... -65~+150

°C

Junction Temperature Tj .......................................................................................................-55~ +125

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) Ptot (Note) ......................................................................... 200 mW

• Maximum Voltages and Currents (Ta=25°C)

Repetitive Peak Reverse Voltage VRRM............................................................................................... 40 V

Continuous Forward Current IF ................................................................................................... 200 mA

Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA

Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA

Note: for double diodes, Ptot is the total power dissipation of both diodes.

Characteristics (Ta=25

°C)

Characteristic

Symbol

Condition

Min.

Max.

Unit

Reverse Breakdown Voltage

VBR

IR=100μA

VF(1)

IF=1mA

320

Forward Voltage (Note 1)

VF(2)

IF=40mA

500

VF(3)

IF=100mA

550

Reverse Leakage Current (Note 2)

VR=30V, Tj=25℃

200

Diode Capacitance

VR=1V, f=1MHz

Reverse Recovery Time

trr

IF=IR=10mA RL=100

measured at IR=1mA

Notes

: 1.pulse test, tp=380μs,duty cycle<2%.

2.pulse test, tp=5ms,duty cycle<2%.

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