DMN4060SVT

Document number: DS35702 Rev. 2 - 2

5 of 7

www.diodes.com

February 2012

© Diodes Incorporated

DMN4060SVT

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 10 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

4

8

12

16

20

0

0.2

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 11 Diode Forward Voltage vs. Current

T = 25°C

A

0

5

10

15

20

25

30

35

40

45

50

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 Typical Drain-Source Leakage Current vs. Voltage

1

10

100

1,000

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

0

510

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 13 Typical Junction Capacitance

C

rss

f = 1MHz

0

5

10

15

20

25

Q(nC)

Fig. 14 Gate Charge

V

= 30V

I=

A

DS

D

4.3