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MBR1045C датащи(PDF) 2 Page - Unisonic Technologies |
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MBR1045C датащи(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MBR1045C Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw Ver.a ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 45 V Working Peak Reverse Voltage VRWM 45 V Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 31.5 V Average Rectified Output Current (TC=105°C) Per Leg IO 5 A Total 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 100 A Repetitive Peak Avalanche Power (1μs, 25°C) PARM 5000 W Operating Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Thermal resistance junction to case mounted on heatsink. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2 °C/W ELECTRICAL CHARACTERISTICS (Per Leg) (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Reverse Breakdown Voltage (Note 1) V(BR)R IR=0.45mA 45 V Forward Voltage Drop VFM IF=5A, TJ=25°C 0.65 V IF=5A, TJ=125°C 0.55 V Leakage Current (Note 1) IRM VR=45V, TJ=25°C μA VR=45V, TJ=125°C mA Typical Junction Capacitance (Note 3) CJ 150 pF Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Thermal resistance junction to case mounted on heatsink. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. |
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