UTT50N06G-TN3-R datasheet(3/8 Pages) UTC

3 / 8 page

UTT50N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-704.C



ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

Drain-Source Leakage Current

IDSS

VDS = 60 V, VGS = 0 V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 20V, VDS = 0 V

100

Reverse

VGS = -20V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C

0.07

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

1.0

3.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 50A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS = 0 V, VDS = 25 V

f = 1MHz

900 1220

Output Capacitance

COSS

430

550

Reverse Transfer Capacitance

CRSS

100

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 30V, ID =25 A,

RG = 50Ω (Note 1, 2)

Turn-On Rise Time

100

200

Turn-Off Delay Time

tD(OFF)

180

Turn-Off Fall Time

160

Total Gate Charge

VDS = 48V, VGS = 10 V

ID = 50A (Note 1, 2)

Gate-Source Charge

QGS

9.6

Gate-Drain Charge

QGD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

IS = 50A, VGS = 0 V

1.5

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

200

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature

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