UTT50N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-704.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous Drain Current

50

A

35

A

Pulsed Drain Current (Note 2)

200

A

Avalanche Energy

Single Pulsed (Note 3)

120

mJ

Repetitive (Note 2)

13

mJ

TO-220

100

W

TO-252

114

Junction Temperature

+150

°C

Operation and Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220

62

°C/W

TO-252

100

Junction to Case

TO-220

1.24

°C/W

TO-252

1.1