UT7430G-K08-3030-R datasheet(4/7 Pages) UTC

номер детали	UT7430G-K08-3030-R

подробное описание детали	30V, 34A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	7 Pages

Scroll/Zoom	100%

производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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4 / 7 page

UT7430

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-903.b



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=30V, VGS=0V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

100

Reverse

VGS=-20V, VDS=0V

100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.5

1.9

2.5

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=20A

mΩ

VGS=4.5V, ID=20A

mΩ

Forward Transconductance

gFS

VDS=5V, ID=20A

On State Drain Current

ID(ON)

VGS=10V, VDS=5V

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=15V, f=1.0MHz

760

Output Capacitance

COSS

125

Reverse Transfer Capacitance

CRSS

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

0.8

1.6

2.4

Ω

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, VDS=15V, ID=20A

6.6

Total Gate Charge

VGS=10V, VDS=15V, ID=20A

Gate to Source Charge

QGS

2.4

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

4.4

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

Drain-Source Diode Forward Voltage

VSD

IS=1A, VGS=0V

0.7

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