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UT7430L-K08-3030-R датащи(PDF) 4 Page - Unisonic Technologies

номер детали UT7430L-K08-3030-R
подробное описание детали  30V, 34A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT7430L-K08-3030-R датащи(HTML) 4 Page - Unisonic Technologies

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UT7430
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-903.b
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
100
nA
Reverse
VGS=-20V, VDS=0V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.5
1.9
2.5
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=20A
10
12
mΩ
VGS=4.5V, ID=20A
13
16
mΩ
Forward Transconductance
gFS
VDS=5V, ID=20A
45
S
On State Drain Current
ID(ON)
VGS=10V, VDS=5V
80
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
760
pF
Output Capacitance
COSS
125
pF
Reverse Transfer Capacitance
CRSS
70
pF
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
0.8
1.6
2.4
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=4.5V, VDS=15V, ID=20A
6.6
nC
Total Gate Charge
QG
VGS=10V, VDS=15V, ID=20A
14
nC
Gate to Source Charge
QGS
2.4
nC
Gate to Drain Charge
QGD
3
nC
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.4
ns
Rise Time
tR
9
ns
Turn-OFF Delay Time
tD(OFF)
17
ns
Fall-Time
tF
6
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
IS
25
A
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.7
1
V



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