UT7410G-K08-3030-R datasheet(3/7 Pages) UTC

3 / 7 page

UT7410

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-902.b

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

TC=25°C

(Note 2)

TC=100°C

TA=25°C

9.5

Continuous

(Note 1)

TA=70°C

IDSM

7.7

Drain Current

Pulsed (Note 3)

IDM

TC=25°C

(Note 2)

TC=100°C

8.3

TA=25°C

3.1

Power Dissipation

(Note 1)

TA=70°C

PDSM

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

t≤10s

°C/W

Junction to Ambient (Note 1)

Steady-State

θJA

°C/W

Junction to Case (Note 2)

Steady-State

θJC

°C/W

Notes: 1. The value of θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum

allowed junction temperature of 150°C. The value in any given application depends on the user's specific

board design, and the maximum temperature of 150°C may be used if the PCB allows it.

2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is

more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

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