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6N10ZG-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали 6N10ZG-TN3-R
подробное описание детали  6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET
PDF  4 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N10ZG-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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6N10Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-920.B
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
Continuous
ID
6.5
A
Pulsed
IDM
8.0
A
Repetitive Avalanche Energy
(Duty Cycle ≤1%)
L=0.1mH
EAR
1.25
mJ
Power Dissipation
PD
16
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
7.5
°C/W
Notes: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θJC is guaranteed by design while θJA is determined by the user’s board deign.



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